Наименование модели: IPD600N25N3 G Производитель: Infineon Описание: Полевой транзистор, N-CH, 250 В, 25 А, TO252-3 Скачать Data Sheet Краткое содержание документа: IPD600N25N3 G OptiMOSTM3 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target application · Halogen-free according to IEC61249-2-21 ...
Наименование модели: IPP200N25N3 G Производитель: Infineon Описание: Полевой транзистор, N-CH, 250 В, 64 А, TO220-3 Скачать Data Sheet Краткое содержание документа: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target application · Halogen-free ...