Наименование модели: NGTB15N120LWG Производитель: ON Semiconductor Описание: IGBT, 1200 В, 15 А, FS1, TO-247-3 Скачать Data Sheet Краткое содержание документа: NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching ...